semix302gb176hds ? by semikron rev. 21 ? 02.12.2008 1 semix ? 2s gb trench igbt modules semix302gb176hds preliminary data features ? homogeneous si ? trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? ul recognised file no. e63532 typical applications ? ac inverter drives ?ups ? electronic welders absolute maximum ratings symbol conditions values unit igbt v ces 1700 v i c t j = 150 c t c =25c 308 a t c =80c 219 a i cnom 200 a i crm i crm = 2xi cnom 400 a v ges -20 ... 20 v t psc v cc = 1000 v v ge 20 v t j = 125 c v ces 1700 v 10 s t j -55 ... 150 c inverse diode i f t j = 150 c t c =25c 389 a t c =80c 262 a i fnom 200 a i frm i frm = 2xi fnom 400 a i fsm t p = 10 ms, sin 180, t j =25c 2000 a t j -40 ... 150 c module i t(rms) 600 a t stg -40 ... 125 c v isol ac sinus 50hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c =200a v ge =15v chiplevel t j =25c 22.45v t j = 125 c 2.45 2.9 v v ce0 t j =25c 11.2v t j = 125 c 0.9 1.1 v r ce v ge =15v t j =25c 5.0 6.3 m ? t j = 125 c 7.8 9.0 m ? v ge(th) v ge =v ce , i c = 8 ma 5.2 5.8 6.4 v i ces v ge =0v v ce = 1700 v t j =25c 0.1 0.3 ma t j = 125 c ma c ies v ce =25v v ge =0v f=1mhz 17.6 nf c oes f=1mhz 0.73 nf c res f=1mhz 0.58 nf q g v ge =- 8 v...+ 15 v 1866 nc r gint t j =25c 3.75 ? t d(on) v cc = 1200 v i c =200a t j = 125 c r g on =6.5 ? r g off =6.5 ? 225 ns t r 45 ns e on 130 mj t d(off) 665 ns t f 105 ns e off 77 mj r th(j-c) per igbt 0.1 k/w r th(j-s) per igbt k/w
semix302gb176hds 2 rev. 21 ? 02.12.2008 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f =200a v ge =0v chiplevel t j =25c 1.5 1.7 v t j = 125 c 1.4 1.6 v v f0 t j =25c 0.9 1.1 1.3 v t j = 125 c 0.7 0.9 1.1 v r f t j =25c 2.0 2.0 2.0 m ? t j = 125 c 2.7 2.7 2.7 m ? i rrm i f =200a di/dt off = 3100 a/s v ge =-15v v cc = 1200 v t j = 125 c 235 a q rr t j = 125 c 77 c e rr t j = 125 c 43 mj r th(j-c) per diode 0.15 k/w r th(j-s) per diode k/w module l ce 18 nh r cc'+ee' res., terminal-chip t c =25c 0.7 m ? t c = 125 c 1m ? r th(c-s) per module 0.045 k/w m s to heat sink (m5) 3 5 nm m t to terminals (m6) 2.5 5 nm nm w 250 g temperature sensor r 100 t c =100c (r 25 =5 k ? ) 0,493 5% k ? b 100/125 r (t) =r 100 exp[b 100/125 (1/t-1/t 100 )]; t[k]; 3550 2% k semix ? 2s gb trench igbt modules semix302gb176hds preliminary data features ? homogeneous si ? trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? ul recognised file no. e63532 typical applications ? ac inverter drives ?ups ? electronic welders
semix302gb176hds ? by semikron rev. 21 ? 02.12.2008 3 fig. 1 typ. output char acteristic, inclusive r cc'+ ee' fig. 2 rated current vs. temperature i c = f (t c ) fig. 3 typ. turn-on /-off energy = f (i c ) fig. 4 typ. turn-on /-off energy = f (r g ) fig. 5 typ. transfer characteristic fig. 6 typ. gate charge characteristic
semix302gb176hds 4 rev. 21 ? 02.12.2008 ? by semikron fig. 7 typ. switching times vs. i c fig. 8 typ. switching times vs. gate resistor r g fig. 9 typ. transient thermal impedance fig. 10 typ. cal diode forward charact., incl. r cc'+ee' fig. 11 typ. cal diode peak reverse recovery current fig. 12 typ. cal diode recovery charge
semix302gb176hds ? by semikron rev. 21 ? 02.12.2008 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. semix 2s gb
|
